Device Engineer/Scientist - (Un-NC-Durham - 27722)

Minimum Education: Doctorate
Jobcode: 280753
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This will be a technical position for the GaN HEMT Product Development team. The position will entail all aspects of integrating various early stages of R&D into production, including MMIC/device process development and measurement.Responsibilities:h Develop detailed process travelers and inspect wafers through the fabrication, package and test processes.h Coordinate with team of scientists, engineers, and technicians to develop fabrication processes for MMICs and discrete devices.h Drive projects related to bringing new products and processes into production.h Product line electrical data tracking and interpretation from a device physics perspective.Preferred Qualifications:h >5 years experience in semiconductor process development, including background in production environment. h Device/circuit layout experience is a strong plus.h RF measurement experience a strong plus.h RF circuit design background a strong plus.h Must have a whatever it takes attitude to get the job done (This may mean working >50 hours per week and/or on weekends when needed).h Be willing to perform tasks outside of normal job duties and past experienceMinimum Requirements:h PhD in Electrical Engineering, with solid-state device background, or related field is required.h Extensive experience in III-V or GaN-related microwave device development.h Previous hands-on experience with device layout, package and test. h Understanding of physics of failure mechanisms in semiconductor devices.h US Citizen or Green Card Holder (incumbent subject to US Government screening for Department of Defense Security Clearance)