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Birck Nanotechnology Center PHONE NUMBER AVAILABLE
Purdue University
West Lafayette ,Indiana Street Address EMAIL AVAILABLE
Education
- Street Address Ph.D in Semiconductor Physics, Purdue University
Thesis focus on design,process and fabrication of III-V semiconductor devices
- 2005 B.Sc in Physics, and B.Sc in Mathematics, Peking University, Beijing
China
Experience
2007-2014 Research Assistant, III-V semiconductor laboratory affiliated Birck
Nanotechnology Center at Purdue University
- Design and development of GaN based wide bandgap electronic transistors and
optoelectronic devices and fabrication of GaAs HEMTs
- Installation and maintenance of the ultra high vacuum Nitride Molecular Beam Epitaxy
system and processing equipments.
- Design, epitaxy, processing and optimization of III-N device structures on both native
substrates and Si substrates grown with MBE and MOCVD.
- Characterization and testing of device quality and defects using AFM, XRD, XRR,
Ellipsometry, PL, SIMS, SEM, TEM, EDS/EDX, FTIR, CV, IV etc
- Device simulation using Matlab, Comsol, Silvaco, Crosslight, Ansys etc
- Installation of ultra-low temperature , dilution fridge system( 7mKelvin)
- Design of high sensitivity in-situ electron transport measurement system, including Hall
measurement, permissivity and susceptibility measurement, etc.
- Reviewer for Applied Physics Letters and Optics Express
Laboratory Skills
- Six year experience of installing and maintaining of nitride epitaxy systems, Growth in
Riber Molecular Beam Epitaxy (MBE) system and Aixtron MOCVD system
- Repair and maintenance of vacuum reaction chambers, Ti Sublimation Pumps, Ion
Pumps, CryoPumps, Turbo Pumps, High Voltage system, Residual Gas Analyzer (RGA),
management of cryogenic Liquid Nitrogen and Liquid Helium system, RF plasma source
-Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), X-Ray
Diffraction, RHEED, Photoluminescence, Hall Measurement, Fourier Transform Infrared
Spectroscopy(FTIR), Mass Spectroscopy
- Titan & JEOL 2010 FEG TEM: HRTEM imaging, energy dispersive spectrometer
(EDS/EDX), diffraction contrast & defect analysis, and electron energy-loss spectrometers
(EELS) mapping, cross-section sample preparation by FIB
- Wafer dicing, Polishing,Masking, lithography, Metallization, Dry Etching,Wet Etching,
Rapid Thermal Annealing , Wire Bonding, PECVD ,PVD
- Phase lock-in amplifier, Noise Current, Photoresponsivity & Photodetectivity, - Electrical
testing by Oscilloscope, Spectrum analyzer, Parameter Analyzer, logic analyzer, network analyzer
etc
- Automated testing on NI ATE platform using Labview and TestS tand
- simulation and optimization by Tcad including Matlab, Comsol multiphysics, Crosslight,
Synopsys Sentaurus, and Silvaco, ADS, Ansys, Cadence
- FORTRAN, C,C++, python, Unix, SolidWorks, Autocad, Labview, SPC,DOE, SAS JMP,
Excel,, Comsol, MS Office.
Patent:
US PHONE NUMBER AVAILABLE : Thin and Flexible Gallium Nitride and Method of Making the Same
http://www.google.com/patents/US20130140517
Selected Research Highlights
- Invented and patented the method to obtain high quality submicron thick free
standing flexible GaN membrane by laser lift off method
- Developed the world s first reproducible nitride Resonant Tunneling Diode (RTD)
on polar nitride substrate
- Developed the world s highest quality InAlN/GaN superlattice structures lattice
matched to GaN substrate
- Have firstly defined the optimal MBE growth condition to obtain atomically
smooth growth morphology on m-plane GaN substrate.
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